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10.1038/s41467-018-05397-w http://scihub22266oqcxt.onion/10.1038/s41467-018-05397-w C6063921!6063921!30054482     free     free     free Warning: file_get_contents(https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pubmed&id=30054482&cmd=llinks): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 215 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Nat+Commun 2018 ; 9 (ä): ä Nephropedia Template TP {{tp|p=30054482|t=2018. Two-dimensional multibit optoelectronic memory with broadband spectrum distinction |pdf=|usr=}}{{30054482}} gab.com Text Two-dimensional multibit optoelectronic memory with broadband spectrum distinction JO: Nat Commun http://www.kidney.de/pget.php?&tw=1&pmid=30054482 #FOAvip Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1?×?106, which ensures over 128 (7?bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5?×?104?s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory. Twit Text FOAVip Two-dimensional multibit optoelectronic memory with broadband spectrum distinction ????Nat Commun http://www.kidney.de/pget.php?&tw=1&pmid=30054482 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=30054482 #FOAvip English Wikipedia <ref>{{Cite pmid|30054482}}</ref> Two-dimensional multibit optoelectronic memory with broadband spectrum distinction #MMPMID30054482 Xiang D; Liu T; Xu J; Tan JY; Hu Z; Lei B; Zheng Y; Wu J; Neto AHC; Liu L; Chen W Nat Commun 2018[]; 9 (ä): ä PMID30054482show ga Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1?×?106, which ensures over 128 (7?bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5?×?104?s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory. äTwo-dimensional multibit optoelectronic memory with broadband spectrum(epmc).pdf DeepDyve Pubget Overpricing