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.jpg): Failed to open stream: No such file or directory in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 117 Adv+Sci+(Weinh)
2018 ; 5
(7
): 1700858
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11% Organic Photovoltaic Devices Based on PTB7-Th: PC(71)BM Photoactive Layers
and Irradiation-Assisted ZnO Electron Transport Layers
#MMPMID30027029
Aqoma H
; Park S
; Park HY
; Hadmojo WT
; Oh SH
; Nho S
; Kim DH
; Seo J
; Park S
; Ryu DY
; Cho S
; Jang SY
Adv Sci (Weinh)
2018[Jul]; 5
(7
): 1700858
PMID30027029
show ga
The enhancement of interfacial charge collection efficiency using buffer layers
is a cost-effective way to improve the performance of organic photovoltaic
devices (OPVs) because they are often universally applicable regardless of the
active materials. However, the availability of high-performance buffer materials,
which are solution-processable at low temperature, are limited and they often
require burdensome additional surface modifications. Herein, high-performance ZnO
based electron transporting layers (ETLs) for OPVs are developed with a novel
g-ray-assisted solution process. Through careful formulation of the ZnO precursor
and g-ray irradiation, the pre-formation of ZnO nanoparticles occurs in the
precursor solutions, which enables the preparation of high quality ZnO films. The
g-ray assisted ZnO (ZnO-G) films possess a remarkably low defect density compared
to the conventionally prepared ZnO films. The low-defect ZnO-G films can improve
charge extraction efficiency of ETL without any additional treatment. The power
conversion efficiency (PCE) of the device using the ZnO-G ETLs is 11.09% with an
open-circuit voltage (V(OC)), short-circuit current density (?J(SC)), and fill
factor (FF) of 0.80 V, 19.54 mA cm(-2), and 0.71, respectively, which is one of
the best values among widely studied
poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]:
[6,6]-phenyl-C(71)-butyric acid methyl ester (PTB7-Th:PC(71)BM)-based devices.