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10.1038/s41467-018-03695-x

http://scihub22266oqcxt.onion/10.1038/s41467-018-03695-x
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C5876377!5876377!29599460
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suck abstract from ncbi


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pmid29599460      Nat+Commun 2018 ; 9 (ä): ä
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  • High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer #MMPMID29599460
  • Miyoshi Y; Fukazawa Y; Amasaka Y; Reckmann R; Yokoi T; Ishida K; Kawahara K; Ago H; Maki H
  • Nat Commun 2018[]; 9 (ä): ä PMID29599460show ga
  • High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.
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