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10.1038/s41598-017-16313-5 http://scihub22266oqcxt.onion/10.1038/s41598-017-16313-5 C5703879!5703879!29180657     free     free     free Deprecated: Implicit conversion from float 235.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 235.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 235.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 235.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 235.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 269.2 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2017 ; 7 (ä): ä Nephropedia Template TP {{tp|p=29180657|t=2017. The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering |pdf=|usr=}}{{29180657}} gab.com Text The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=29180657 #FOAvip It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50?nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar. Twit Text FOAVip The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=29180657 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=29180657 #FOAvip English Wikipedia <ref>{{Cite pmid|29180657}}</ref> The electron-phonon interaction at deep Bi2Te3-semiconductor interfaces from Brillouin light scattering #MMPMID29180657 Wiesner M; Trzaskowska A; Mroz B; Charpentier S; Wang S; Song Y; Lombardi F; Lucignano P; Benedek G; Campi D; Bernasconi M; Guinea F; Tagliacozzo A Sci Rep 2017[]; 7 (ä): ä PMID29180657show ga It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50?nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar. äThe electron-phonon interaction at deep Bi2Te3-semiconductor interface(epmc).pdf DeepDyve Pubget Overpricing