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10.1038/s41598-017-14009-4 http://scihub22266oqcxt.onion/10.1038/s41598-017-14009-4 C5666037!5666037!29093549     free     free     free Deprecated: Implicit conversion from float 217.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 217.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 217.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 217.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2017 ; 7 (ä): ä Nephropedia Template TP {{tp|p=29093549|t=2017. Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors |pdf=|usr=}}{{29093549}} gab.com Text Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=29093549 #FOAvip By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening of energy levels in the quantum dot, both heat and electrical currents are computed in a voltage range beyond the linear response. Using our homemade code consisting in a 3D Poisson-Schrödinger solver and the resolution of the Master equation, the Seebeck coefficient at low bias voltage appears to be material independent and nearly independent on the level broadening, which makes this device promising for metrology applications as a nanoscale standard of Seebeck coefficient. Besides, at higher voltage bias, the non-linear characteristics of the heat current are shown to be related to the multi-level effects. Finally, when considering only the electronic contribution to the thermal conductance, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power. Twit Text FOAVip Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=29093549 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=29093549 #FOAvip English Wikipedia <ref>{{Cite pmid|29093549}}</ref> Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors #MMPMID29093549 Talbo V; Saint-Martin J; Retailleau S; Dollfus P Sci Rep 2017[]; 7 (ä): ä PMID29093549show ga By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening of energy levels in the quantum dot, both heat and electrical currents are computed in a voltage range beyond the linear response. Using our homemade code consisting in a 3D Poisson-Schrödinger solver and the resolution of the Master equation, the Seebeck coefficient at low bias voltage appears to be material independent and nearly independent on the level broadening, which makes this device promising for metrology applications as a nanoscale standard of Seebeck coefficient. Besides, at higher voltage bias, the non-linear characteristics of the heat current are shown to be related to the multi-level effects. Finally, when considering only the electronic contribution to the thermal conductance, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power. äNon-linear effects and thermoelectric efficiency of quantum dot-based (epmc).pdf DeepDyve Pubget Overpricing