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10.1038/s41467-017-00691-5 http://scihub22266oqcxt.onion/10.1038/s41467-017-00691-5 C5608874!5608874!28935879     free     free     free Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Nat+Commun 2017 ; 8 (ä): ä Nephropedia Template TP {{tp|p=28935879|t=2017. Interlayer excitons in a bulk van der Waals semiconductor |pdf=|usr=}}{{28935879}} gab.com Text Interlayer excitons in a bulk van der Waals semiconductor JO: Nat Commun http://www.kidney.de/pget.php?&tw=1&pmid=28935879 #FOAvip Bound electron?hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose?Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe2, we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures. Twit Text FOAVip Interlayer excitons in a bulk van der Waals semiconductor ????Nat Commun http://www.kidney.de/pget.php?&tw=1&pmid=28935879 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=28935879 #FOAvip English Wikipedia <ref>{{Cite pmid|28935879}}</ref> Interlayer excitons in a bulk van der Waals semiconductor #MMPMID28935879 Arora A; Drüppel M; Schmidt R; Deilmann T; Schneider R; Molas MR; Marauhn P; Michaelis de Vasconcellos S; Potemski M; Rohlfing M; Bratschitsch R Nat Commun 2017[]; 8 (ä): ä PMID28935879show ga Bound electron?hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose?Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe2, we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures. äInterlayer excitons in a bulk van der Waals semiconductor (epmc).pdf DeepDyve Pubget Overpricing