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10.1186/s11671-017-2197-3 http://scihub22266oqcxt.onion/10.1186/s11671-017-2197-3 C5483226!5483226!28651386     free     free     free Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Nanoscale+Res+Lett 2017 ; 12 (ä): ä Nephropedia Template TP {{tp|p=28651386|t=2017. Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching |pdf=|usr=}}{{28651386}} gab.com Text Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching JO: Nanoscale Res Lett http://www.kidney.de/pget.php?&tw=1&pmid=28651386 #FOAvip Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I?V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 ? cm. Twit Text FOAVip Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching ????Nanoscale Res Lett http://www.kidney.de/pget.php?&tw=1&pmid=28651386 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=28651386 #FOAvip English Wikipedia <ref>{{Cite pmid|28651386}}</ref> Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching #MMPMID28651386 Hutagalung SD; Fadhali MM; Areshi RA; Tan FD Nanoscale Res Lett 2017[]; 12 (ä): ä PMID28651386show ga Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I?V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 ? cm. äOptical and Electrical Characteristics of Silicon Nanowires Prepared b(epmc).pdf DeepDyve Pubget Overpricing