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2017 ; 2
(5
): 1214-1222
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Recombination in Perovskite Solar Cells: Significance of Grain Boundaries,
Interface Traps, and Defect Ions
#MMPMID28540366
Sherkar TS
; Momblona C
; Gil-Escrig L
; Ávila J
; Sessolo M
; Bolink HJ
; Koster LJA
ACS Energy Lett
2017[May]; 2
(5
): 1214-1222
PMID28540366
show ga
Trap-assisted recombination, despite being lower as compared with traditional
inorganic solar cells, is still the dominant recombination mechanism in
perovskite solar cells (PSCs) and limits their efficiency. We investigate the
attributes of the primary trap-assisted recombination channels (grain boundaries
and interfaces) and their correlation to defect ions in PSCs. We achieve this by
using a validated device model to fit the simulations to the experimental data of
efficient vacuum-deposited p-i-n and n-i-p CH(3)NH(3)PbI(3) solar cells,
including the light intensity dependence of the open-circuit voltage and fill
factor. We find that, despite the presence of traps at interfaces and grain
boundaries (GBs), their neutral (when filled with photogenerated charges)
disposition along with the long-lived nature of holes leads to the high
performance of PSCs. The sign of the traps (when filled) is of little importance
in efficient solar cells with compact morphologies (fused GBs, low trap density).
On the other hand, solar cells with noncompact morphologies (open GBs, high trap
density) are sensitive to the sign of the traps and hence to the cell preparation
methods. Even in the presence of traps at GBs, trap-assisted recombination at
interfaces (between the transport layers and the perovskite) is the dominant loss
mechanism. We find a direct correlation between the density of traps, the density
of mobile ionic defects, and the degree of hysteresis observed in the
current-voltage (J-V) characteristics. The presence of defect states or mobile
ions not only limits the device performance but also plays a role in the J-V
hysteresis.