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10.1038/s41598-017-01897-9 http://scihub22266oqcxt.onion/10.1038/s41598-017-01897-9 C5431859!5431859!28496134     free     free     free Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2017 ; 7 (ä): ä Nephropedia Template TP {{tp|p=28496134|t=2017. Inkjet printing of NiO films and integration as hole transporting layers in polymer solar cells |pdf=|usr=}}{{28496134}} gab.com Text Inkjet printing of NiO films and integration as hole transporting layers in polymer solar cells JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=28496134 #FOAvip Stability concerns of organic solar cell devices have led to the development of alternative hole transporting layers such as NiO which lead to superior device life times over conventional Poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS) buffered solar cells. From the printability of such devices, it is imperative to be able to print NiO layers in the organic solar cell devices with normal architecture which has so far remained unreported. In this manuscript, we report on the successful ink-jet printing of very thin NiO thin films with controlled thickness and morphology and their integration in organic solar cell devices. The parameters that were found to strongly affect the formation of a thin yet continuous NiO film were substrate surface treatment, drop spacing, and substrate temperature during printing. The effect of these parameters was investigated through detailed morphological characterization using optical and atomic force microscopy and the results suggested that one can achieve a transmittance of ~89% for a ~18?nm thin NiO film with uniform structure and morphology, fabricated using a drop spacing of 50??m and a heat treatment temperature of 400?°C. The devices fabricated with printed NiO hole transporting layers exhibit power conversion efficiencies comparable to the devices with spin coated NiO films. Twit Text FOAVip Inkjet printing of NiO films and integration as hole transporting layers in polymer solar cells ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=28496134 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=28496134 #FOAvip English Wikipedia <ref>{{Cite pmid|28496134}}</ref> Inkjet printing of NiO films and integration as hole transporting layers in polymer solar cells #MMPMID28496134 Singh A; Gupta SK; Garg A Sci Rep 2017[]; 7 (ä): ä PMID28496134show ga Stability concerns of organic solar cell devices have led to the development of alternative hole transporting layers such as NiO which lead to superior device life times over conventional Poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS) buffered solar cells. From the printability of such devices, it is imperative to be able to print NiO layers in the organic solar cell devices with normal architecture which has so far remained unreported. In this manuscript, we report on the successful ink-jet printing of very thin NiO thin films with controlled thickness and morphology and their integration in organic solar cell devices. The parameters that were found to strongly affect the formation of a thin yet continuous NiO film were substrate surface treatment, drop spacing, and substrate temperature during printing. The effect of these parameters was investigated through detailed morphological characterization using optical and atomic force microscopy and the results suggested that one can achieve a transmittance of ~89% for a ~18?nm thin NiO film with uniform structure and morphology, fabricated using a drop spacing of 50??m and a heat treatment temperature of 400?°C. The devices fabricated with printed NiO hole transporting layers exhibit power conversion efficiencies comparable to the devices with spin coated NiO films. äInkjet printing of NiO films and integration as hole transporting laye(epmc).pdf DeepDyve Pubget Overpricing