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10.1038/s41598-017-01219-z http://scihub22266oqcxt.onion/10.1038/s41598-017-01219-z C5430745!5430745!28442742     free     free     free Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2017 ; 7 (ä): ä Nephropedia Template TP {{tp|p=28442742|t=2017. Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes |pdf=|usr=}}{{28442742}} gab.com Text Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=28442742 #FOAvip We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics. Twit Text FOAVip Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=28442742 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=28442742 #FOAvip English Wikipedia <ref>{{Cite pmid|28442742}}</ref> Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes #MMPMID28442742 Lee S; Bac SK; Choi S; Lee H; Yoo T; Lee S; Liu X; Dobrowolska M; Furdyna JK Sci Rep 2017[]; 7 (ä): ä PMID28442742show ga We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics. äNon-volatile logic gates based on planar Hall effect in magnetic films(epmc).pdf DeepDyve Pubget Overpricing