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10.1038/srep46671 http://scihub22266oqcxt.onion/10.1038/srep46671 C5397970!5397970!28425459     free     free     free Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2017 ; 7 (ä): ä Nephropedia Template TP {{tp|p=28425459|t=2017. Complementary spin transistor using a quantum well channel |pdf=|usr=}}{{28425459}} gab.com Text Complementary spin transistor using a quantum well channel JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=28425459 #FOAvip In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor. Twit Text FOAVip Complementary spin transistor using a quantum well channel ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=28425459 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=28425459 #FOAvip English Wikipedia <ref>{{Cite pmid|28425459}}</ref> Complementary spin transistor using a quantum well channel #MMPMID28425459 Park YH; Choi JW; Kim Hj; Chang J; Han SH; Choi HJ; Koo HC Sci Rep 2017[]; 7 (ä): ä PMID28425459show ga In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor. äComplementary spin transistor using a quantum well channel (epmc).pdf DeepDyve Pubget Overpricing