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10.1038/ncomms14956

http://scihub22266oqcxt.onion/10.1038/ncomms14956
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C5385629!5385629!28387225
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suck abstract from ncbi


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pmid28387225      Nat+Commun 2017 ; 8 (ä): ä
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  • Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials #MMPMID28387225
  • Ding W; Zhu J; Wang Z; Gao Y; Xiao D; Gu Y; Zhang Z; Zhu W
  • Nat Commun 2017[]; 8 (ä): ä PMID28387225show ga
  • Interest in two-dimensional (2D) van der Waals materials has grown rapidly across multiple scientific and engineering disciplines in recent years. However, ferroelectricity, the presence of a spontaneous electric polarization, which is important in many practical applications, has rarely been reported in such materials so far. Here we employ first-principles calculations to discover a branch of the 2D materials family, based on In2Se3 and other III2-VI3 van der Waals materials, that exhibits room-temperature ferroelectricity with reversible spontaneous electric polarization in both out-of-plane and in-plane orientations. The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In2Se3/graphene, exhibiting a tunable Schottky barrier, and In2Se3/WSe2, showing a significant band gap reduction in the combined system. These findings promise to substantially broaden the tunability of van der Waals heterostructures for a wide range of applications.
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