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An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO
Nanowire Array/PbS Quantum Dots Film Heterostructure
#MMPMID28331785
Zheng Z
; Gan L
; Zhang J
; Zhuge F
; Zhai T
Adv Sci (Weinh)
2017[Mar]; 4
(3
): 1600316
PMID28331785
show ga
ZnO nanostructure-based photodetectors have a wide applications in many aspects,
however, the response range of which are mainly restricted in the UV region
dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors
consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures
are fabricated through modified electrospining method and an exchanging process.
Besides wider response region compared to pure ZnO NWs based photodetectors, the
heterostructures based photodetectors have faster response and recovery speed in
UV range. Moreover, such photodetectors demonstrate good flexibility as well,
which maintain almost constant performances under extreme (up to 180°) and repeat
(up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy
is further verified on other kinds of 1D nanowires and 0D QDs, and similar
enhancement on the performance of corresponding photodetecetors can be acquired,
evidencing the universality of this strategy.