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10.1038/srep43666

http://scihub22266oqcxt.onion/10.1038/srep43666
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C5333630!5333630!28252656
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suck abstract from ncbi


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pmid28252656      Sci+Rep 2017 ; 7 (ä): ä
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  • Quantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers #MMPMID28252656
  • Nechaev IA; Eremeev SV; Krasovskii EE; Echenique PM; Chulkov EV
  • Sci Rep 2017[]; 7 (ä): ä PMID28252656show ga
  • The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a break- through in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show that quantum spin Hall insulators can be realized in ultra-thin films constructed from a trivial band insulator with strong spin-orbit coupling. The thinnest film with an inverted gap large enough for practical applications is a centrosymmetric sextuple layer built out of two inversely stacked non-centrosymmetric BiTeI trilayers. This nontrivial sextuple layer turns out to be the structure element of an artificially designed strong three-dimensional topological insulator Bi2Te2I2. We reveal general principles of how a topological insulator can be composed from the structure elements of the BiTeX family (X?=?I, Br, Cl), which opens new perspectives towards engineering of topological phases.
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