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10.1038/srep43892 http://scihub22266oqcxt.onion/10.1038/srep43892 C5333155!5333155!28252011     free     free     free Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2017 ; 7 (ä): ä Nephropedia Template TP {{tp|p=28252011|t=2017. High-speed maskless nanolithography with visible light based on photothermal localization |pdf=|usr=}}{{28252011}} gab.com Text High-speed maskless nanolithography with visible light based on photothermal localization JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=28252011 #FOAvip High-speed maskless nanolithography is experimentally achieved on AgInSbTe thin films. The lithography was carried out in air at room temperature, with a GaN diode laser (??=?405?nm), and on a large sample disk of diameter 120?mm. The normal width of the written features measures 46?±?5?nm, about 1/12 of the diffraction allowed smallest light spot, and the lithography speed reaches 6?~?8?m/s, tens of times faster than traditional laser writing methods. The writing resolution is instantaneously tunable by adjusting the laser power. The reason behind the significant breakthrough in terms of writing resolution and speed is found as the concentration of light induced heat. Therefore, the heat spot is far smaller than the light spot, so does the size of the written features. Such a sharp focus of heat occurs only on the selected writing material, and the phenomenon is referred as the photothermal localization response. The physics behind the effect is explained and supported with numerical simulations. Twit Text FOAVip High-speed maskless nanolithography with visible light based on photothermal localization ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=28252011 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=28252011 #FOAvip English Wikipedia <ref>{{Cite pmid|28252011}}</ref> High-speed maskless nanolithography with visible light based on photothermal localization #MMPMID28252011 Wei J; Zhang K; Wei T; Wang Y; Wu Y; Xiao M Sci Rep 2017[]; 7 (ä): ä PMID28252011show ga High-speed maskless nanolithography is experimentally achieved on AgInSbTe thin films. The lithography was carried out in air at room temperature, with a GaN diode laser (??=?405?nm), and on a large sample disk of diameter 120?mm. The normal width of the written features measures 46?±?5?nm, about 1/12 of the diffraction allowed smallest light spot, and the lithography speed reaches 6?~?8?m/s, tens of times faster than traditional laser writing methods. The writing resolution is instantaneously tunable by adjusting the laser power. The reason behind the significant breakthrough in terms of writing resolution and speed is found as the concentration of light induced heat. Therefore, the heat spot is far smaller than the light spot, so does the size of the written features. Such a sharp focus of heat occurs only on the selected writing material, and the phenomenon is referred as the photothermal localization response. The physics behind the effect is explained and supported with numerical simulations. äHigh-speed maskless nanolithography with visible light based on photot(epmc).pdf DeepDyve Pubget Overpricing