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10.1002/advs.201500419

http://scihub22266oqcxt.onion/10.1002/advs.201500419
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C5067630!5067630!27812472
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suck abstract from ncbi


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pmid27812472      Adv+Sci+(Weinh) 2016 ; 3 (6): ä
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  • Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor #MMPMID27812472
  • Pang Y; Xue F; Wang L; Chen J; Luo J; Jiang T; Zhang C; Wang ZL
  • Adv Sci (Weinh) 2016[Jun]; 3 (6): ä PMID27812472show ga
  • Molybdenum disulfide (MoS2) has attracted a great attention as an excellent 2D material for future optoelectronic devices. Here, a novel MoS2 tribotronic phototransistor is developed by a conjunction of a MoS2 phototransistor and a triboelectric nanogenerator (TENG) in sliding mode. When an external friction layer produces a relative sliding on the device, the induced positive charges on the back gate of the MoS2 phototransistor act as a ?gate? to increase the channel conductivity as the traditional back gate voltage does. With the sliding distance increases, the photoresponsivity of the device is drastically enhanced from 221.0 to 727.8 A W?1 at the 100 mW cm?2 UV excitation intensity and 1 V bias voltage. This work has extended the emerging tribotronics to the field of photodetection based on 2D material, and demonstrated a new way to realize the adjustable photoelectric devices with high photoresponsivity via human interfacing.
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