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10.1038/srep28590 http://scihub22266oqcxt.onion/10.1038/srep28590 C4917858!4917858!27334038     free     free     free Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2016 ; 6 (ä): ä Nephropedia Template TP {{tp|p=27334038|t=2016. Geometrically pinned magnetic domain wall for multi-bit per cell storage memory |pdf=|usr=}}{{27334038}} gab.com Text Geometrically pinned magnetic domain wall for multi-bit per cell storage memory JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=27334038 #FOAvip Spintronic devices currently rely on magnetic switching or controlled motion of domain walls (DWs) by an external magnetic field or a spin-polarized current. Controlling the position of DW is essential for defining the state/information in a magnetic memory. During the process of nanowire fabrication, creating an off-set of two parts of the device could help to pin DW at a precise position. Micromagnetic simulation conducted on in-plane magnetic anisotropy materials shows the effectiveness of the proposed design for pinning DW at the nanoconstriction region. The critical current for moving DW from one state to the other is strongly dependent on nanoconstricted region (width and length) and the magnetic properties of the material. The DW speed which is essential for fast writing of the data could reach values in the range of hundreds m/s. Furthermore, evidence of multi-bit per cell memory is demonstrated via a magnetic nanowire with more than one constriction. Twit Text FOAVip Geometrically pinned magnetic domain wall for multi-bit per cell storage memory ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=27334038 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=27334038 #FOAvip English Wikipedia <ref>{{Cite pmid|27334038}}</ref> Geometrically pinned magnetic domain wall for multi-bit per cell storage memory #MMPMID27334038 Bahri MA; Sbiaa R Sci Rep 2016[]; 6 (ä): ä PMID27334038show ga Spintronic devices currently rely on magnetic switching or controlled motion of domain walls (DWs) by an external magnetic field or a spin-polarized current. Controlling the position of DW is essential for defining the state/information in a magnetic memory. During the process of nanowire fabrication, creating an off-set of two parts of the device could help to pin DW at a precise position. Micromagnetic simulation conducted on in-plane magnetic anisotropy materials shows the effectiveness of the proposed design for pinning DW at the nanoconstriction region. The critical current for moving DW from one state to the other is strongly dependent on nanoconstricted region (width and length) and the magnetic properties of the material. The DW speed which is essential for fast writing of the data could reach values in the range of hundreds m/s. Furthermore, evidence of multi-bit per cell memory is demonstrated via a magnetic nanowire with more than one constriction. äGeometrically pinned magnetic domain wall for multi-bit per cell stora(epmc).pdf DeepDyve Pubget Overpricing