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10.1063/1.4944597 http://scihub22266oqcxt.onion/10.1063/1.4944597 C4865001!4865001!27182082     free     free     free Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       J+Appl+Phys 2016 ; 119 (12): ä Nephropedia Template TP {{tp|p=27182082|t=2016. Probing surface recombination velocities in semiconductors using two-photon microscopy |pdf=|usr=}}{{27182082}} gab.com Text Probing surface recombination velocities in semiconductors using two-photon microscopy JO: J Appl Phys http://www.kidney.de/pget.php?&tw=1&pmid=27182082 #FOAvip The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows for better measurements of bulk and subsurface interfaces properties. Here we analyze the diffusion problem related to this optical technique. Our three-dimensional treatment enables us to separate lifetime (recombination) from transport effects (diffusion) in the photoluminescence intensity. It also allows us to consider surface recombination occurring at a variety of geometries: a single plane (representing an isolated exposed or buried interface), two parallel planes (representing two inequivalent interfaces), and a spherical surface (representing the enclosing surface of a grain boundary). We provide fully analytical results and scalings directly amenable to data fitting, and apply those to experimental data collected on heteroepitaxial CdTe/ZnTe/Si. Twit Text FOAVip Probing surface recombination velocities in semiconductors using two-photon microscopy ????J Appl Phys http://www.kidney.de/pget.php?&tw=1&pmid=27182082 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=27182082 #FOAvip English Wikipedia <ref>{{Cite pmid|27182082}}</ref> Probing surface recombination velocities in semiconductors using two-photon microscopy #MMPMID27182082 Gaury B; Haney PM J Appl Phys 2016[Mar]; 119 (12): ä PMID27182082show ga The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows for better measurements of bulk and subsurface interfaces properties. Here we analyze the diffusion problem related to this optical technique. Our three-dimensional treatment enables us to separate lifetime (recombination) from transport effects (diffusion) in the photoluminescence intensity. It also allows us to consider surface recombination occurring at a variety of geometries: a single plane (representing an isolated exposed or buried interface), two parallel planes (representing two inequivalent interfaces), and a spherical surface (representing the enclosing surface of a grain boundary). We provide fully analytical results and scalings directly amenable to data fitting, and apply those to experimental data collected on heteroepitaxial CdTe/ZnTe/Si. äProbing surface recombination velocities in semiconductors using two-p(epmc).pdf DeepDyve Pubget Overpricing