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10.1038/ncomms10675 http://scihub22266oqcxt.onion/10.1038/ncomms10675 C4757756!4757756!26880041     free     free     free Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Nat+Commun 2016 ; 7 (ä): ä Nephropedia Template TP {{tp|p=26880041|t=2016. Athermal domain-wall creep near a ferroelectric quantum critical point |pdf=|usr=}}{{26880041}} gab.com Text Athermal domain-wall creep near a ferroelectric quantum critical point JO: Nat Commun http://www.kidney.de/pget.php?&tw=1&pmid=26880041 #FOAvip Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point. Twit Text FOAVip Athermal domain-wall creep near a ferroelectric quantum critical point ????Nat Commun http://www.kidney.de/pget.php?&tw=1&pmid=26880041 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26880041 #FOAvip English Wikipedia <ref>{{Cite pmid|26880041}}</ref> Athermal domain-wall creep near a ferroelectric quantum critical point #MMPMID26880041 Kagawa F; Minami N; Horiuchi S; Tokura Y Nat Commun 2016[]; 7 (ä): ä PMID26880041show ga Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point. äAthermal domain-wall creep near a ferroelectric quantum critical point(epmc).pdf DeepDyve Pubget Overpricing