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2016 ; 7
(ä): 10671
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Structural semiconductor-to-semimetal phase transition in two-dimensional
materials induced by electrostatic gating
#MMPMID26868916
Li Y
; Duerloo KA
; Wauson K
; Reed EJ
Nat Commun
2016[Feb]; 7
(ä): 10671
PMID26868916
show ga
Dynamic control of conductivity and optical properties via atomic structure
changes is of technological importance in information storage. Energy consumption
considerations provide a driving force towards employing thin materials in
devices. Monolayer transition metal dichalcogenides are nearly atomically thin
materials that can exist in multiple crystal structures, each with distinct
electrical properties. By developing new density functional-based methods, we
discover that electrostatic gating device configurations have the potential to
drive structural semiconductor-to-semimetal phase transitions in some monolayer
transition metal dichalcogenides. Here we show that the
semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a
gate voltage of several volts with appropriate choice of dielectric. We find that
the transition gate voltage can be reduced arbitrarily by alloying, for example,
for Mo(x)W(1-x)Te2 monolayers. Our findings identify a new physical mechanism,
not existing in bulk materials, to dynamically control structural phase
transitions in two-dimensional materials, enabling potential applications in
phase-change electronic devices.