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10.1038/ncomms10296 http://scihub22266oqcxt.onion/10.1038/ncomms10296 C4735623!4735623!26777243     free     free     free Deprecated: Implicit conversion from float 227.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 227.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 227.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 227.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 261.2 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Nat+Commun 2016 ; 7 (ä): ä Nephropedia Template TP {{tp|p=26777243|t=2016. Dynamic detection of electron spin accumulation in ferromagnet?semiconductor devices by ferromagnetic resonance |pdf=|usr=}}{{26777243}} gab.com Text Dynamic detection of electron spin accumulation in ferromagnet semiconductor devices by ferromagnetic resonance JO: Nat Commun http://www.kidney.de/pget.php?&tw=1&pmid=26777243 #FOAvip A distinguishing feature of spin accumulation in ferromagnet?semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300?K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this approach enables a measurement of short spin lifetimes (<100?ps), a regime that is not accessible in semiconductors using traditional Hanle techniques. Twit Text FOAVip Dynamic detection of electron spin accumulation in ferromagnet semiconductor devices by ferromagnetic resonance ????Nat Commun http://www.kidney.de/pget.php?&tw=1&pmid=26777243 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26777243 #FOAvip English Wikipedia <ref>{{Cite pmid|26777243}}</ref> Dynamic detection of electron spin accumulation in ferromagnet?semiconductor devices by ferromagnetic resonance #MMPMID26777243 Liu C; Patel SJ; Peterson TA; Geppert CC; Christie KD; Stecklein G; Palmstrøm CJ; Crowell PA Nat Commun 2016[]; 7 (ä): ä PMID26777243show ga A distinguishing feature of spin accumulation in ferromagnet?semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300?K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this approach enables a measurement of short spin lifetimes (<100?ps), a regime that is not accessible in semiconductors using traditional Hanle techniques. äDynamic detection of electron spin accumulation in ferromagnet?semicon(epmc).pdf DeepDyve Pubget Overpricing