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2016 ; 7
(ä): 10276
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Termination layer compensated tunnelling magnetoresistance in ferrimagnetic
Heusler compounds with high perpendicular magnetic anisotropy
#MMPMID26776829
Jeong J
; Ferrante Y
; Faleev SV
; Samant MG
; Felser C
; Parkin SS
Nat Commun
2016[Jan]; 7
(ä): 10276
PMID26776829
show ga
Although high-tunnelling spin polarization has been observed in soft,
ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has
been no experimental observation to date of high-tunnelling magnetoresistance in
the latter. Here we report the preparation of highly textured, polycrystalline
Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields
exceeding 7 T, making them technologically relevant. However, the small and
negative tunnelling magnetoresistance that we find is attributed to predominant
tunnelling from the lower moment Mn-Ge termination layers that are oppositely
magnetized to the higher moment Mn-Mn layers. The net spin polarization of the
current reflects the different proportions of the two distinct termination layers
and their associated tunnelling matrix elements that result from inevitable
atomic scale roughness. We show that by engineering the spin polarization of the
two termination layers to be of the same sign, even though these layers are
oppositely magnetized, high-tunnelling magnetoresistance is possible.