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2015 ; 5
(ä): 14490
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Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for
Si-based thermoelectric materials
#MMPMID26434678
Yamasaka S
; Nakamura Y
; Ueda T
; Takeuchi S
; Sakai A
Sci Rep
2015[Oct]; 5
(ä): 14490
PMID26434678
show ga
Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge
nanodots (NDs) with ultrahigh density for the purpose of developing Si-based
thermoelectric materials. The Si/Ge ND stacked structures, which were formed by
the ultrathin SiO2 film technique, exhibited lower thermal conductivities than
those of the conventional nanostructured SiGe bulk alloys, despite the stacked
structures having a smaller Ge fraction. This came from the large thermal
resistance caused by phonon scattering at the Si/Ge ND interfaces. The phonon
scattering can be controlled by the Ge ND structure, which was independent of Si
layer structure for carrier transport. These results demonstrate the
effectiveness of ultrasmall epitaxial Ge NDs as phonon scattering sources,
opening up a route for the realisation of Si-based thermoelectric materials.