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10.1038/srep14547 http://scihub22266oqcxt.onion/10.1038/srep14547 C4586892!4586892!26416434     free     free     free Deprecated: Implicit conversion from float 219.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 219.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 219.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 219.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 219.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2015 ; 5 (ä): ä Nephropedia Template TP {{tp|p=26416434|t=2015. Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors |pdf=|usr=}}{{26416434}} gab.com Text Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26416434 #FOAvip We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200?MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6?±?0.4)?×?10?2?cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22?±?0.07?cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost. Twit Text FOAVip Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26416434 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26416434 #FOAvip English Wikipedia <ref>{{Cite pmid|26416434}}</ref> Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors #MMPMID26416434 Matsushima T; Sandanayaka ASD; Esaki Y; Adachi C Sci Rep 2015[]; 5 (ä): ä PMID26416434show ga We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200?MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6?±?0.4)?×?10?2?cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22?±?0.07?cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost. äVacuum-and-solvent-free fabrication of organic semiconductor layers fo(epmc).pdf DeepDyve Pubget Overpricing