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10.1038/srep14386 http://scihub22266oqcxt.onion/10.1038/srep14386 C4585772!4585772!26395756     free     free     free Deprecated: Implicit conversion from float 229.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 229.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 229.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2015 ; 5 (ä): ä Nephropedia Template TP {{tp|p=26395756|t=2015. Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells |pdf=|usr=}}{{26395756}} gab.com Text Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26395756 #FOAvip AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3?5??m) is achieved in such nitride semiconductors. Twit Text FOAVip Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26395756 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26395756 #FOAvip English Wikipedia <ref>{{Cite pmid|26395756}}</ref> Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells #MMPMID26395756 Rong X; Wang XQ; Chen G; Zheng XT; Wang P; Xu FJ; Qin ZX; Tang N; Chen YH; Sang LW; Sumiya M; Ge WK; Shen B Sci Rep 2015[]; 5 (ä): ä PMID26395756show ga AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3?5??m) is achieved in such nitride semiconductors. äMid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells (epmc).pdf DeepDyve Pubget Overpricing