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10.1186/s11671-015-1076-z http://scihub22266oqcxt.onion/10.1186/s11671-015-1076-z C4582038!4582038!26403925     free     free     free Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Nanoscale+Res+Lett 2015 ; 10 (ä): ä Nephropedia Template TP {{tp|p=26403925|t=2015. Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices |pdf=|usr=}}{{26403925}} gab.com Text Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices JO: Nanoscale Res Lett http://www.kidney.de/pget.php?&tw=1&pmid=26403925 #FOAvip Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. Here, we review some of the recent progress in the research along this direction, with a focus on devices fabricated with simple and CMOS-compatible-processing technology. We present results from a scanning probe method (Kelvin probe force microscopy) which show direct observation of dopant-induced potential modulations. We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths. This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices. Twit Text FOAVip Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices ????Nanoscale Res Lett http://www.kidney.de/pget.php?&tw=1&pmid=26403925 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26403925 #FOAvip English Wikipedia <ref>{{Cite pmid|26403925}}</ref> Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices #MMPMID26403925 Moraru D; Samanta A; Tyszka K; Anh LT; Muruganathan M; Mizuno T; Jablonski R; Mizuta H; Tabe M Nanoscale Res Lett 2015[]; 10 (ä): ä PMID26403925show ga Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. Here, we review some of the recent progress in the research along this direction, with a focus on devices fabricated with simple and CMOS-compatible-processing technology. We present results from a scanning probe method (Kelvin probe force microscopy) which show direct observation of dopant-induced potential modulations. We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths. This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices. äTunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices (epmc).pdf DeepDyve Pubget Overpricing