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10.3390/s150818416

http://scihub22266oqcxt.onion/10.3390/s150818416
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C4570328!4570328!26225981
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suck abstract from ncbi


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pmid26225981      Sensors+(Basel) 2015 ; 15 (8): 18416-26
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  • AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein #MMPMID26225981
  • Lee HH; Bae M; Jo SH; Shin JK; Son DH; Won CH; Jeong HM; Lee JH; Kang SW
  • Sensors (Basel) 2015[Aug]; 15 (8): 18416-26 PMID26225981show ga
  • In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.
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