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10.1038/srep13771 http://scihub22266oqcxt.onion/10.1038/srep13771 C4563554!4563554!26350107     free     free     free Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2015 ; 5 (ä): ä Nephropedia Template TP {{tp|p=26350107|t=2015. Graphene-Nanodiamond Heterostructures and their application to High Current Devices |pdf=|usr=}}{{26350107}} gab.com Text Graphene-Nanodiamond Heterostructures and their application to High Current Devices JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26350107 #FOAvip Graphene on hydrogen terminated monolayer nanodiamond heterostructures provides a new way to improve carrier transport characteristics of the graphene, offering up to 60% improvement when compared with similar graphene on SiO2/Si substrates. These heterostructures offers excellent current-carrying abilities whilst offering the prospect of a fast, low cost and easy methodology for device applications. The use of ND monolayers is also a compatible technology for the support of large area graphene films. The nature of the C-H bonds between graphene and H-terminated NDs strongly influences the electronic character of the heterostructure, creating effective charge redistribution within the system. Field effect transistors (FETs) have been fabricated based on this novel herterostructure to demonstrate device characteristics and the potential of this approach. Twit Text FOAVip Graphene-Nanodiamond Heterostructures and their application to High Current Devices ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26350107 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26350107 #FOAvip English Wikipedia <ref>{{Cite pmid|26350107}}</ref> Graphene-Nanodiamond Heterostructures and their application to High Current Devices #MMPMID26350107 Zhao F; Vrajitoarea A; Jiang Q; Han X; Chaudhary A; Welch JO; Jackman RB Sci Rep 2015[]; 5 (ä): ä PMID26350107show ga Graphene on hydrogen terminated monolayer nanodiamond heterostructures provides a new way to improve carrier transport characteristics of the graphene, offering up to 60% improvement when compared with similar graphene on SiO2/Si substrates. These heterostructures offers excellent current-carrying abilities whilst offering the prospect of a fast, low cost and easy methodology for device applications. The use of ND monolayers is also a compatible technology for the support of large area graphene films. The nature of the C-H bonds between graphene and H-terminated NDs strongly influences the electronic character of the heterostructure, creating effective charge redistribution within the system. Field effect transistors (FETs) have been fabricated based on this novel herterostructure to demonstrate device characteristics and the potential of this approach. äGraphene-Nanodiamond Heterostructures and their application to High Cu(epmc).pdf DeepDyve Pubget Overpricing