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10.1038/srep13753 http://scihub22266oqcxt.onion/10.1038/srep13753 C4562229!4562229!26348823     free     free     free       Sci+Rep 2015 ; 5 (ä): ä Nephropedia Template TP {{tp|p=26348823|t=2015. A double barrier memristive device |pdf=|usr=}}{{26348823}} gab.com Text A double barrier memristive device JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26348823 #FOAvip We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70??m2 and 2300??m2 were obtained, which indicates a non-filamentary based resistive switching mechanism. In a detailed experimental and theoretical analysis we show evidence that resistive switching originates from oxygen diffusion and modifications of the local electronic interface states within the NbxOy layer, which influences the interface properties of the Au (Schottky) contact and of the Al2O3 tunneling barrier, respectively. The presented device might offer several benefits like an intrinsic current compliance, improved retention and no need for an electric forming procedure, which is especially attractive for possible applications in highly dense random access memories or neuromorphic mixed signal circuits. Twit Text FOAVip A double barrier memristive device ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26348823 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26348823 #FOAvip English Wikipedia <ref>{{Cite pmid|26348823}}</ref> A double barrier memristive device #MMPMID26348823 Hansen M; Ziegler M; Kolberg L; Soni R; Dirkmann S; Mussenbrock T; Kohlstedt H Sci Rep 2015[]; 5 (ä): ä PMID26348823show ga We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70??m2 and 2300??m2 were obtained, which indicates a non-filamentary based resistive switching mechanism. In a detailed experimental and theoretical analysis we show evidence that resistive switching originates from oxygen diffusion and modifications of the local electronic interface states within the NbxOy layer, which influences the interface properties of the Au (Schottky) contact and of the Al2O3 tunneling barrier, respectively. The presented device might offer several benefits like an intrinsic current compliance, improved retention and no need for an electric forming procedure, which is especially attractive for possible applications in highly dense random access memories or neuromorphic mixed signal circuits. äA double barrier memristive device (epmc).pdf DeepDyve Pubget Overpricing