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10.1038/srep12576 http://scihub22266oqcxt.onion/10.1038/srep12576 C4517170!4517170!26215429     free     free     free       Sci+Rep 2015 ; 5 (ä): ä Nephropedia Template TP {{tp|p=26215429|t=2015. Functional ferroelectric tunnel junctions on silicon |pdf=|usr=}}{{26215429}} gab.com Text Functional ferroelectric tunnel junctions on silicon JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26215429 #FOAvip The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the ?universal memory?. In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO3/La0.67Sr0.33MnO3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission electron microscope images prove the high epitaxial quality of the single crystal perovskite films grown on silicon. Furthermore, the write speed, data retention and fatigue properties of the device compare favorably with flash memories. The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories. Twit Text FOAVip Functional ferroelectric tunnel junctions on silicon ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26215429 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26215429 #FOAvip English Wikipedia <ref>{{Cite pmid|26215429}}</ref> Functional ferroelectric tunnel junctions on silicon #MMPMID26215429 Guo R; Wang Z; Zeng S; Han K; Huang L; Schlom DG; Venkatesan T; Ariando A; Chen J Sci Rep 2015[]; 5 (ä): ä PMID26215429show ga The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the ?universal memory?. In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO3/La0.67Sr0.33MnO3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission electron microscope images prove the high epitaxial quality of the single crystal perovskite films grown on silicon. Furthermore, the write speed, data retention and fatigue properties of the device compare favorably with flash memories. The results prove that the silicon-based ferroelectric tunnel junction is a very promising candidate for application in future non-volatile memories. äFunctional ferroelectric tunnel junctions on silicon (epmc).pdf DeepDyve Pubget Overpricing