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10.1186/s11671-015-0976-2 http://scihub22266oqcxt.onion/10.1186/s11671-015-0976-2 C4499035!4499035!26163138     free     free     free Deprecated: Implicit conversion from float 219.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 219.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 219.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 219.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Nanoscale+Res+Lett 2015 ; 10 (ä): ä Nephropedia Template TP {{tp|p=26163138|t=2015. Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties |pdf=|usr=}}{{26163138}} gab.com Text Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties JO: Nanoscale Res Lett http://www.kidney.de/pget.php?&tw=1&pmid=26163138 #FOAvip We have successfully fabricated and characterized highly uniform nanopatterned graphene (NPG). Thin anodized aluminum oxide nanomask was prepared by facile self-assembly technique without using polymer buffer layer, which was utilized as a direct-contact template for oxygen plasma etch to produce near-periodic, small-neck-width NPG. The NPG exhibits a homogeneous mesh structure with an average neck width as small as ~11 nm. The highly uniform 11-nm neck width creates a quantum confinement in NPG, which has led to a record bandgap opening of ~200 meV in graphene for the given level of neck width. Electronic characterization of single-layer NPG field-effect transistors (FETs) was performed, which demonstrated a high on-off switching ratio. We found that the NPG allows for experimental confirmation of the relationship between electrical conductance and bandgap. This work also demonstrates that our direct-contact, self-assembled mask lithography is a pathway for low-cost, high-throughput, large-scale nanomanufacturing of graphene nanodevices. Twit Text FOAVip Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties ????Nanoscale Res Lett http://www.kidney.de/pget.php?&tw=1&pmid=26163138 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26163138 #FOAvip English Wikipedia <ref>{{Cite pmid|26163138}}</ref> Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties #MMPMID26163138 Choi D; Kuru C; Kim Y; Kim G; Kim T; Chen R; Jin S Nanoscale Res Lett 2015[]; 10 (ä): ä PMID26163138show ga We have successfully fabricated and characterized highly uniform nanopatterned graphene (NPG). Thin anodized aluminum oxide nanomask was prepared by facile self-assembly technique without using polymer buffer layer, which was utilized as a direct-contact template for oxygen plasma etch to produce near-periodic, small-neck-width NPG. The NPG exhibits a homogeneous mesh structure with an average neck width as small as ~11 nm. The highly uniform 11-nm neck width creates a quantum confinement in NPG, which has led to a record bandgap opening of ~200 meV in graphene for the given level of neck width. Electronic characterization of single-layer NPG field-effect transistors (FETs) was performed, which demonstrated a high on-off switching ratio. We found that the NPG allows for experimental confirmation of the relationship between electrical conductance and bandgap. This work also demonstrates that our direct-contact, self-assembled mask lithography is a pathway for low-cost, high-throughput, large-scale nanomanufacturing of graphene nanodevices. äUniformly Nanopatterned Graphene Field-Effect Transistors with Enhance(epmc).pdf DeepDyve Pubget Overpricing