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10.1021/acs.nanolett.5b01748 http://scihub22266oqcxt.onion/10.1021/acs.nanolett.5b01748 C4498448!4498448!26052733     free     free     free Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Nano+Lett 2015 ; 15 (7): 4783-7 Nephropedia Template TP {{tp|p=26052733|t=2015. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures |pdf=|usr=}}{{26052733}} gab.com Text Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures JO: Nano Lett http://www.kidney.de/pget.php?&tw=1&pmid=26052733 #FOAvip In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor?liquid?solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I?V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm2. Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ?111? oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device. Twit Text FOAVip Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures ????Nano Lett http://www.kidney.de/pget.php?&tw=1&pmid=26052733 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26052733 #FOAvip English Wikipedia <ref>{{Cite pmid|26052733}}</ref> Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures #MMPMID26052733 Kral S; Zeiner C; Stöger-Pollach M; Bertagnolli E; den Hertog MI; Lopez-Haro M; Robin E; El Hajraoui K; Lugstein A Nano Lett 2015[Jul]; 15 (7): 4783-7 PMID26052733show ga In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor?liquid?solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I?V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm2. Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ?111? oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device. äAbrupt Schottky Junctions in Al/Ge Nanowire Heterostructures (epmc).pdf DeepDyve Pubget Overpricing