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10.1038/srep12094 http://scihub22266oqcxt.onion/10.1038/srep12094 C4498189!4498189!26160465     free     free     free Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2015 ; 5 (ä): ä Nephropedia Template TP {{tp|p=26160465|t=2015. Controlling the on/off current ratio of ferroelectric field-effect transistors |pdf=|usr=}}{{26160465}} gab.com Text Controlling the on/off current ratio of ferroelectric field-effect transistors JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26160465 #FOAvip The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET. Twit Text FOAVip Controlling the on/off current ratio of ferroelectric field-effect transistors ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26160465 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26160465 #FOAvip English Wikipedia <ref>{{Cite pmid|26160465}}</ref> Controlling the on/off current ratio of ferroelectric field-effect transistors #MMPMID26160465 Katsouras I; Zhao D; Spijkman MJ; Li M; Blom PWM; Leeuw DMd; Asadi K Sci Rep 2015[]; 5 (ä): ä PMID26160465show ga The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET. äControlling the on/off current ratio of ferroelectric field-effect tra(epmc).pdf DeepDyve Pubget Overpricing