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10.1038/srep11485 http://scihub22266oqcxt.onion/10.1038/srep11485 C4473535!4473535!26089133     free     free     free Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 211.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2015 ; 5 (ä): ä Nephropedia Template TP {{tp|p=26089133|t=2015. Intersubband Transition in GaN/InGaN Multiple Quantum Wells |pdf=|usr=}}{{26089133}} gab.com Text Intersubband Transition in GaN/InGaN Multiple Quantum Wells JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26089133 #FOAvip Utilizing the growth temperature controlled epitaxy, high quality GaN/In0.15Ga0.85N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated from the ISBT has been successfully observed at infrared regime covering the 3?5??m atmosphere window, where the central absorption wavelength is modulated by adjusting the quantum well width. With increasing the quantum well thickness, the ISBT center wave length blue shifts at thickness less than 2.8?nm and then redshifts with further increase of the well thickness. The non-monotonic trend is most likely due to the polarization induced asymmetric shape of the quantum wells. Twit Text FOAVip Intersubband Transition in GaN/InGaN Multiple Quantum Wells ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26089133 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26089133 #FOAvip English Wikipedia <ref>{{Cite pmid|26089133}}</ref> Intersubband Transition in GaN/InGaN Multiple Quantum Wells #MMPMID26089133 Chen G; Wang XQ; Rong X; Wang P; Xu FJ; Tang N; Qin ZX; Chen YH; Shen B Sci Rep 2015[]; 5 (ä): ä PMID26089133show ga Utilizing the growth temperature controlled epitaxy, high quality GaN/In0.15Ga0.85N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated from the ISBT has been successfully observed at infrared regime covering the 3?5??m atmosphere window, where the central absorption wavelength is modulated by adjusting the quantum well width. With increasing the quantum well thickness, the ISBT center wave length blue shifts at thickness less than 2.8?nm and then redshifts with further increase of the well thickness. The non-monotonic trend is most likely due to the polarization induced asymmetric shape of the quantum wells. äIntersubband Transition in GaN/InGaN Multiple Quantum Wells (epmc).pdf DeepDyve Pubget Overpricing