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10.1038/srep11312

http://scihub22266oqcxt.onion/10.1038/srep11312
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C4471896!4471896!26086849
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suck abstract from ncbi


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pmid26086849      Sci+Rep 2015 ; 5 (ä): ä
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  • CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform #MMPMID26086849
  • Ooka Y; Tetsumoto T; Fushimi A; Yoshiki W; Tanabe T
  • Sci Rep 2015[]; 5 (ä): ä PMID26086849show ga
  • Progress on the fabrication of ultrahigh-Q photonic-crystal nanocavities (PhC-NCs) has revealed the prospect for new applications including silicon Raman lasers that require a strong confinement of light. Among various PhC-NCs, the highest Q has been recorded with silicon. On the other hand, microcavity is one of the basic building blocks in silicon photonics. However, the fusion between PhC-NCs and silicon photonics has yet to be exploited, since PhC-NCs are usually fabricated with electron-beam lithography and require an air-bridge structure. Here we show that a 2D-PhC-NC fabricated with deep-UV photolithography on a silica-clad silicon-on-insulator (SOI) structure will exhibit a high-Q of 2.2?×?105 with a mode-volume of ~1.7(?/n)3. This is the highest Q demonstrated with photolithography. We also show that this device exhibits an efficient thermal diffusion and enables high-speed switching. The demonstration of the photolithographic fabrication of high-Q silica-clad PhC-NCs will open possibility for mass-manufacturing and boost the fusion between silicon photonics and CMOS devices.
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