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10.1038/srep11312 http://scihub22266oqcxt.onion/10.1038/srep11312 C4471896!4471896 !26086849     free     free     free Warning: file_get_contents(https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pubmed&id=26086849 &cmd=llinks): Failed to open stream: HTTP request failed! 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CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform |pdf=|usr=}}{{26086849 }} gab.com Text CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26086849 #FOAvip Progress on the fabrication of ultrahigh-Q photonic-crystal nanocavities (PhC-NCs) has revealed the prospect for new applications including silicon Raman lasers that require a strong confinement of light. Among various PhC-NCs, the highest Q has been recorded with silicon. On the other hand, microcavity is one of the basic building blocks in silicon photonics. However, the fusion between PhC-NCs and silicon photonics has yet to be exploited, since PhC-NCs are usually fabricated with electron-beam lithography and require an air-bridge structure. Here we show that a 2D-PhC-NC fabricated with deep-UV photolithography on a silica-clad silicon-on-insulator (SOI) structure will exhibit a high-Q of 2.2 × 10(5) with a mode-volume of ~ 1.7(?/n)(3). This is the highest Q demonstrated with photolithography. We also show that this device exhibits an efficient thermal diffusion and enables high-speed switching. The demonstration of the photolithographic fabrication of high-Q silica-clad PhC-NCs will open possibility for mass-manufacturing and boost the fusion between silicon photonics and CMOS devices. Twit Text FOAVip CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26086849 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26086849 #FOAvip English Wikipedia <ref>{{Cite pmid|26086849 }}</ref> CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform #MMPMID26086849 Ooka Y ; Tetsumoto T ; Fushimi A ; Yoshiki W ; Tanabe T Sci Rep 2015[Jun]; 5 (ä): 11312 PMID26086849 show ga Progress on the fabrication of ultrahigh-Q photonic-crystal nanocavities (PhC-NCs) has revealed the prospect for new applications including silicon Raman lasers that require a strong confinement of light. Among various PhC-NCs, the highest Q has been recorded with silicon. On the other hand, microcavity is one of the basic building blocks in silicon photonics. However, the fusion between PhC-NCs and silicon photonics has yet to be exploited, since PhC-NCs are usually fabricated with electron-beam lithography and require an air-bridge structure. Here we show that a 2D-PhC-NC fabricated with deep-UV photolithography on a silica-clad silicon-on-insulator (SOI) structure will exhibit a high-Q of 2.2 × 10(5) with a mode-volume of ~ 1.7(?/n)(3). This is the highest Q demonstrated with photolithography. We also show that this device exhibits an efficient thermal diffusion and enables high-speed switching. The demonstration of the photolithographic fabrication of high-Q silica-clad PhC-NCs will open possibility for mass-manufacturing and boost the fusion between silicon photonics and CMOS devices. äCMOS compatible high-Q photonic crystal nanocavity fabricated with p(epmc).pdf DeepDyve Pubget Overpricing