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10.1038/srep10040 http://scihub22266oqcxt.onion/10.1038/srep10040 C4464396!4464396!26067359     free     free     free Deprecated: Implicit conversion from float 231.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 231.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 231.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 231.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2015 ; 5 (ä): ä Nephropedia Template TP {{tp|p=26067359|t=2015. Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy |pdf=|usr=}}{{26067359}} gab.com Text Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26067359 #FOAvip Precise measurement and characterization of electrostatic potential structures and the concomitant electric fields at nanodimensions are essential to understand and control the properties of modern materials and devices. However, directly observing and measuring such local electric field information is still a major challenge in microscopy. Here, differential phase contrast imaging in scanning transmission electron microscopy with segmented type detector is used to image a p-n junction in a GaAs compound semiconductor. Differential phase contrast imaging is able to both clearly visualize and quantify the projected, built-in electric field in the p-n junction. The technique is further shown capable of sensitively detecting the electric field variations due to dopant concentration steps within both p-type and n-type regions. Through live differential phase contrast imaging, this technique can potentially be used to image the electromagnetic field structure of new materials and devices even under working conditions. Twit Text FOAVip Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26067359 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26067359 #FOAvip English Wikipedia <ref>{{Cite pmid|26067359}}</ref> Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy #MMPMID26067359 Shibata N; Findlay SD; Sasaki H; Matsumoto T; Sawada H; Kohno Y; Otomo S; Minato R; Ikuhara Y Sci Rep 2015[]; 5 (ä): ä PMID26067359show ga Precise measurement and characterization of electrostatic potential structures and the concomitant electric fields at nanodimensions are essential to understand and control the properties of modern materials and devices. However, directly observing and measuring such local electric field information is still a major challenge in microscopy. Here, differential phase contrast imaging in scanning transmission electron microscopy with segmented type detector is used to image a p-n junction in a GaAs compound semiconductor. Differential phase contrast imaging is able to both clearly visualize and quantify the projected, built-in electric field in the p-n junction. The technique is further shown capable of sensitively detecting the electric field variations due to dopant concentration steps within both p-type and n-type regions. Through live differential phase contrast imaging, this technique can potentially be used to image the electromagnetic field structure of new materials and devices even under working conditions. äImaging of built-in electric field at a p-n junction by scanning trans(epmc).pdf DeepDyve Pubget Overpricing