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10.1038/srep11374 http://scihub22266oqcxt.onion/10.1038/srep11374 C4464327!4464327!26065401     free     free     free Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 213.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Sci+Rep 2015 ; 5 (ä): ä Nephropedia Template TP {{tp|p=26065401|t=2015. Schottky barrier formation and band bending revealed by first- principles calculations |pdf=|usr=}}{{26065401}} gab.com Text Schottky barrier formation and band bending revealed by first- principles calculations JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26065401 #FOAvip The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped rutile titania in contact with gold (Au/Nb:TiO2). The local Schottky barrier height is found to vary between 0 and 1.26?eV depending on the position of the dopant. The band bending is caused by a dopant induced dipole field between the interface and the dopant site, whereas the pristine Au/TiO2 interface does not show any band bending. These findings open the possibility for atomic scale optimisation of the Schottky barrier and light harvesting in metal-semiconductor nanostructures. Twit Text FOAVip Schottky barrier formation and band bending revealed by first- principles calculations ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26065401 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26065401 #FOAvip English Wikipedia <ref>{{Cite pmid|26065401}}</ref> Schottky barrier formation and band bending revealed by first- principles calculations #MMPMID26065401 Jiao Y; Hellman A; Fang Y; Gao S; Käll M Sci Rep 2015[]; 5 (ä): ä PMID26065401show ga The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped rutile titania in contact with gold (Au/Nb:TiO2). The local Schottky barrier height is found to vary between 0 and 1.26?eV depending on the position of the dopant. The band bending is caused by a dopant induced dipole field between the interface and the dopant site, whereas the pristine Au/TiO2 interface does not show any band bending. These findings open the possibility for atomic scale optimisation of the Schottky barrier and light harvesting in metal-semiconductor nanostructures. äSchottky barrier formation and band bending revealed by first- princip(epmc).pdf DeepDyve Pubget Overpricing