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Substrate-mediated strain effect on the role of thermal heating and electric
field on metal-insulator transition in vanadium dioxide nanobeams
#MMPMID26040637
Kim MW
; Jung WG
; Hyun-Cho
; Bae TS
; Chang SJ
; Jang JS
; Hong WK
; Kim BJ
Sci Rep
2015[Jun]; 5
(?): 10861
PMID26040637
show ga
Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted
great attention because of their single domain metal-insulator transition (MIT)
nature that differs from a bulk sample. The VO2 nanostructures can also provide
new opportunities to explore, understand, and ultimately engineer MIT properties
for applications of novel functional devices. Importantly, the MIT properties of
the VO2 nanostructures are significantly affected by stoichiometry, doping, size
effect, defects, and in particular, strain. Here, we report the effect of
substrate-mediated strain on the correlative role of thermal heating and electric
field on the MIT in the VO2 nanobeams by altering the strength of the substrate
attachment. Our study may provide helpful information on controlling the
properties of VO2 nanobeam for the device applications by changing temperature
and voltage with a properly engineered strain.
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