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10.1073/pnas.1501548112 http://scihub22266oqcxt.onion/10.1073/pnas.1501548112 C4371916!4371916!25733848     free     free     free Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 233.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534       Proc+Natl+Acad+Sci+U+S+A 2015 ; 112 (11): 3217-22 Nephropedia Template TP {{tp|p=25733848|t=2015. Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors |pdf=|usr=}}{{25733848}} gab.com Text Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors JO: Proc Natl Acad Sci U S A http://www.kidney.de/pget.php?&tw=1&pmid=25733848 #FOAvip Although impressive progress in solution-processed metal-oxide (MO) electronics has been achieved, fundamental science challenges remain concerning whether solution-processed MO materials and particularly technologically relevant, indium-gallium-tin-oxide (IGZO), can achieve efficient and stable charge transport characteristics when processed at low temperatures for short times and how IGZO film density, porosity, carrier mobility, and charge trapping can be manipulated. Here, we report a coating technique, spray-combustion synthesis, and demonstrate IGZO semiconductor thickness, densification, nanoporosity, electron mobility, trap densities, and bias stress stability approaching the quality of sputtered films. Twit Text FOAVip Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors ????Proc Natl Acad Sci U S A http://www.kidney.de/pget.php?&tw=1&pmid=25733848 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=25733848 #FOAvip English Wikipedia <ref>{{Cite pmid|25733848}}</ref> Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors #MMPMID25733848 Yu X; Smith J; Zhou N; Zeng L; Guo P; Xia Y; Alvarez A; Aghion S; Lin H; Yu J; Chang RPH; Bedzyk MJ; Ferragut R; Marks TJ; Facchetti A Proc Natl Acad Sci U S A 2015[Mar]; 112 (11): 3217-22 PMID25733848show ga Although impressive progress in solution-processed metal-oxide (MO) electronics has been achieved, fundamental science challenges remain concerning whether solution-processed MO materials and particularly technologically relevant, indium-gallium-tin-oxide (IGZO), can achieve efficient and stable charge transport characteristics when processed at low temperatures for short times and how IGZO film density, porosity, carrier mobility, and charge trapping can be manipulated. Here, we report a coating technique, spray-combustion synthesis, and demonstrate IGZO semiconductor thickness, densification, nanoporosity, electron mobility, trap densities, and bias stress stability approaching the quality of sputtered films. äSpray-combustion synthesis: Efficient solution route to high-performan(epmc).pdf DeepDyve Pubget Overpricing