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10.1088/1361-6528/ac2e26 http://scihub22266oqcxt.onion/10.1088/1361-6528/ac2e26 34624872!ä!34624872 Warning: file_get_contents(https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pubmed&id=34624872&cmd=llinks): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 215 Deprecated: Implicit conversion from float 217.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 217.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 217.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 217.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Warning: imagejpeg(C:\Inetpub\vhosts\kidney.de\httpdocs\phplern\34624872.jpg): Failed to open stream: No such file or directory in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 117       Nanotechnology 2021 ; 33 (5): ä Nephropedia Template TP {{tp|p=34624872|t=2021. Gate-all-around nanowire vertical tunneling FETs by ferroelectric internal voltage amplification |pdf=|usr=}}{{34624872}} gab.com Text Gate-all-around nanowire vertical tunneling FETs by ferroelectric internal voltage amplification JO: Nanotechnology http://www.kidney.de/pget.php?&tw=1&pmid=34624872 #FOAvip This work illustrates the most effective way of utilizing the ferroelectricity for tunneling field-effect transistors (TFETs). The ferroelectric (Hf(0.5)Zr(0.5)O(2)) in shunt with gate-dielectric is utilized as an optimized metal-ferroelectric-semiconductor (OMFS) option to improve the internal voltage (V(int)) for ample utilization of polarization and electric fields of Hf(0.5)Zr(0.5)O(2)across the tunneling region. The modeling ofV(int)signifies 0.15-1.2 nm reduction in tunneling length (lambda) than the nominal metal-ferroelectric-insulator-semiconductor (MFIS) option. Furthermore, the TFET geometry with the scaled-epitaxy region as vertical TFET (VTFET), strained Si(0.6)Ge(0.4)as source, and gate-all-around nanowire options are used as an added advantage for further enhancement of TFET's performance. As a result, the proposed design (OMFS-VTFET) achieves superior DC and RF performances than the MFIS option of TFET. The figure of merits in terms of DC characteristics in the proposed and optimized structure are of improved on-current (=0.23 mAmum(-1)), high on-to-off current ratio (=10(11)), steep subthreshold swing (=33.36 mV dec(-1)), and superior unity gain cut-off frequency (>/=300 GHz). The design is revealed as energy-efficient with significant reduction of energy-efficiency in both logic and memory applications. Twit Text FOAVip Gate-all-around nanowire vertical tunneling FETs by ferroelectric internal voltage amplification ????Nanotechnology http://www.kidney.de/pget.php?&tw=1&pmid=34624872 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=34624872 #FOAvip English Wikipedia <ref>{{Cite pmid|34624872}}</ref> Gate-all-around nanowire vertical tunneling FETs by ferroelectric internal voltage amplification #MMPMID34624872 Thoti N; Li Y Nanotechnology 2021[Nov]; 33 (5): ä PMID34624872show ga This work illustrates the most effective way of utilizing the ferroelectricity for tunneling field-effect transistors (TFETs). The ferroelectric (Hf(0.5)Zr(0.5)O(2)) in shunt with gate-dielectric is utilized as an optimized metal-ferroelectric-semiconductor (OMFS) option to improve the internal voltage (V(int)) for ample utilization of polarization and electric fields of Hf(0.5)Zr(0.5)O(2)across the tunneling region. The modeling ofV(int)signifies 0.15-1.2 nm reduction in tunneling length (lambda) than the nominal metal-ferroelectric-insulator-semiconductor (MFIS) option. Furthermore, the TFET geometry with the scaled-epitaxy region as vertical TFET (VTFET), strained Si(0.6)Ge(0.4)as source, and gate-all-around nanowire options are used as an added advantage for further enhancement of TFET's performance. As a result, the proposed design (OMFS-VTFET) achieves superior DC and RF performances than the MFIS option of TFET. The figure of merits in terms of DC characteristics in the proposed and optimized structure are of improved on-current (=0.23 mAmum(-1)), high on-to-off current ratio (=10(11)), steep subthreshold swing (=33.36 mV dec(-1)), and superior unity gain cut-off frequency (>/=300 GHz). The design is revealed as energy-efficient with significant reduction of energy-efficiency in both logic and memory applications. äGate-all-around nanowire vertical tunneling FETs by ferroelectric inte(epmc).pdf DeepDyve Pubget Overpricing