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10.1021/acs.nanolett.1c01705 http://scihub22266oqcxt.onion/10.1021/acs.nanolett.1c01705 34514803!?!34514803 Warning: file_get_contents(https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pubmed&id=34514803&cmd=llinks): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 215       Nano+Lett 2021 ; 21 (18): 7527-7533 Nephropedia Template TP {{tp|p=34514803|t=2021. Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well |pdf=|usr=}}{{34514803}} gab.com Text Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well JO: Nano Lett http://www.kidney.de/pget.php?&tw=1&pmid=34514803 #FOAvip Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type doping using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall-bar devices, which can operate as two separate or coupled electron layers controlled by the top gate and back gate. Profound Shubnikov-de Haas (SdH) oscillations are observed in both top and bottom electron layers. Landau level hybridization between two layers, compound and charge-transferable bilayer quantum Hall states at filling factor nu = 4, 6, and 8, are analyzed. Our work opens the door for the study of Weyl physics in coupled bilayer systems of 2D materials. Twit Text FOAVip Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well ????Nano Lett http://www.kidney.de/pget.php?&tw=1&pmid=34514803 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=34514803 #FOAvip English Wikipedia <ref>{{Cite pmid|34514803}}</ref> Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well #MMPMID34514803 Niu C; Qiu G; Wang Y; Si M; Wu W; Ye PD Nano Lett 2021[Sep]; 21 (18): 7527-7533 PMID34514803show ga Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type doping using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall-bar devices, which can operate as two separate or coupled electron layers controlled by the top gate and back gate. Profound Shubnikov-de Haas (SdH) oscillations are observed in both top and bottom electron layers. Landau level hybridization between two layers, compound and charge-transferable bilayer quantum Hall states at filling factor nu = 4, 6, and 8, are analyzed. Our work opens the door for the study of Weyl physics in coupled bilayer systems of 2D materials. ?Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well (epmc).pdf DeepDyve Pubget Overpricing