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2016 ; 6
(ä): 28651
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Twin-mediated crystal growth: an enigma resolved
#MMPMID27346073
Shahani AJ
; Gulsoy EB
; Poulsen SO
; Xiao X
; Voorhees PW
Sci Rep
2016[Jun]; 6
(ä): 28651
PMID27346073
show ga
During crystal growth, faceted interfaces may be perturbed by defects, leading to
a rich variety of polycrystalline growth forms. One such defect is the coherent
?3 {111} twin boundary, which is widely known to catalyze crystal growth. These
defects have a profound effect on the properties of many materials: for example,
electron-hole recombination rates strongly depend on the character of the twin
boundaries in polycrystalline Si photovoltaic cells. However, the morphology of
the twinned interface during growth has long been a mystery due to the lack of
four-dimensional (i.e., space and time resolved) experiments. Many controversial
mechanisms have been proposed for this process, most of which lack experimental
verification. Here, we probe the real-time interfacial dynamics of
polycrystalline Si particles growing from an Al-Si-Cu liquid via
synchrotron-based X-ray tomography. Our novel analysis of the time evolution of
the interfacial normals allows us to quantify unambiguously the habit plane and
grain boundary orientations during growth. This, when combined with direct
measurements of the interfacial morphology provide the first confirmation of
twin-mediated growth, proposed over 50 years ago. Using the insights provided by
these experiments, we have developed a unified picture of the phenomena
responsible for the dynamics of faceted Si growth.