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2017 ; 3
(7
): e1603191
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Metal nanoparticle film-based room temperature Coulomb transistor
#MMPMID28740864
Willing S
; Lehmann H
; Volkmann M
; Klinke C
Sci Adv
2017[Jul]; 3
(7
): e1603191
PMID28740864
show ga
Single-electron transistors would represent an approach to developing less
power-consuming microelectronic devices if room temperature operation and
industry-compatible fabrication were possible. We present a concept based on
stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate
device architecture, which leads to well-defined and well-controllable transistor
characteristics. This Coulomb transistor has three main advantages. By using the
scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized
metal nanoparticles with standard lithography techniques. The resulting
transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb
oscillations, and room temperature operation. Furthermore, this concept allows
for versatile tuning of the device properties such as Coulomb energy gap and
threshold voltage, as well as period, position, and strength of the oscillations.