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10.1038/srep33686 http://scihub22266oqcxt.onion/10.1038/srep33686 C5028712!5028712 !27646692     free     free     free Warning: file_get_contents(https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pubmed&id=27646692 &cmd=llinks): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 215 Warning: imagejpeg(C:\Inetpub\vhosts\kidney.de\httpdocs\phplern\27646692 .jpg): Failed to open stream: No such file or directory in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 117       Sci+Rep 2016 ; 6 (ä): 33686 Nephropedia Template TP {{tp|p=27646692 |t=2016. Interference-based molecular transistors |pdf=|usr=}}{{27646692 }} gab.com Text Interference-based molecular transistors JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=27646692 #FOAvip Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20?mV, which is a factor of six smaller than the theoretical limit for a metal-oxide-semiconductor field-effect transistor. Twit Text FOAVip Interference-based molecular transistors ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=27646692 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=27646692 #FOAvip English Wikipedia <ref>{{Cite pmid|27646692 }}</ref> Interference-based molecular transistors #MMPMID27646692 Li Y ; Mol JA ; Benjamin SC ; Briggs GA Sci Rep 2016[Sep]; 6 (ä): 33686 PMID27646692 show ga Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20?mV, which is a factor of six smaller than the theoretical limit for a metal-oxide-semiconductor field-effect transistor. äInterference-based molecular transistors (epmc).pdf DeepDyve Pubget Overpricing