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.jpg): Failed to open stream: No such file or directory in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 117 Nanoscale+Res+Lett
2016 ; 11
(1
): 164
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Indium Antimonide Nanowires: Synthesis and Properties
#MMPMID27009531
Shafa M
; Akbar S
; Gao L
; Fakhar-E-Alam M
; Wang ZM
Nanoscale Res Lett
2016[Dec]; 11
(1
): 164
PMID27009531
show ga
This article summarizes some of the critical features of pure indium antimonide
nanowires (InSb NWs) growth and their potential applications in the industry. In
the first section, historical studies on the growth of InSb NWs have been
presented, while in the second part, a comprehensive overview of the various
synthesis techniques is demonstrated briefly. The major emphasis of current
review is vapor phase deposition of NWs by manifold techniques. In addition,
author review various protocols and methodologies employed to generate NWs from
diverse material systems via self-organized fabrication procedures comprising
chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb,
molecular/ chemical beam epitaxy, solution-based techniques, and top-down
fabrication method. The benefits and ill effects of the gold and self-catalyzed
materials for the growth of NWs are explained at length. Afterward, in the next
part, four thermodynamic characteristics of NW growth criterion concerning the
expansion of NWs, growth velocity, Gibbs-Thomson effect, and growth model were
expounded and discussed concisely. Recent progress in device fabrications is
explained in the third part, in which the electrical and optical properties of
InSb NWs were reviewed by considering the effects of conductivity which are
diameter dependent and the applications of NWs in the fabrications of
field-effect transistors, quantum devices, thermoelectrics, and detectors.