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10.1038/srep10548 http://scihub22266oqcxt.onion/10.1038/srep10548 C4444968!4444968 !26014446     free     free     free Warning: imagejpeg(C:\Inetpub\vhosts\kidney.de\httpdocs\phplern\26014446 .jpg): Failed to open stream: No such file or directory in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 117       Sci+Rep 2015 ; 5 (ä): 10548 Nephropedia Template TP {{tp|p=26014446 |t=2015. Giant Electroresistive Ferroelectric Diode on 2DEG |pdf=|usr=}}{{26014446 }} gab.com Text Giant Electroresistive Ferroelectric Diode on 2DEG JO: Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26014446 #FOAvip Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr(0.2)Ti(0.8))O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I- ratio (>10(8) at ± 6 V) and I(on)/I(off) ratio (>10(7)). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics. Twit Text FOAVip Giant Electroresistive Ferroelectric Diode on 2DEG ????Sci Rep http://www.kidney.de/pget.php?&tw=1&pmid=26014446 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26014446 #FOAvip English Wikipedia <ref>{{Cite pmid|26014446 }}</ref> Giant Electroresistive Ferroelectric Diode on 2DEG #MMPMID26014446 Kim SI ; Jin Gwon H ; Kim DH ; Keun Kim S ; Choi JW ; Yoon SJ ; Jung Chang H ; Kang CY ; Kwon B ; Bark CW ; Hong SH ; Kim JS ; Baek SH Sci Rep 2015[May]; 5 (ä): 10548 PMID26014446 show ga Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr(0.2)Ti(0.8))O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I- ratio (>10(8) at ± 6 V) and I(on)/I(off) ratio (>10(7)). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics. äGiant Electroresistive Ferroelectric Diode on 2DEG (epmc).pdf DeepDyve Pubget Overpricing