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10.3390/ma7032301 http://scihub22266oqcxt.onion/10.3390/ma7032301 C5453288!5453288 !28788569     free     free     free Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Warning: imagejpeg(C:\Inetpub\vhosts\kidney.de\httpdocs\phplern\28788569 .jpg): Failed to open stream: No such file or directory in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 117       Materials+(Basel) 2014 ; 7 (3 ): 2301-2339 Nephropedia Template TP {{tp|p=28788569 |t=2014. Germanium Based Field-Effect Transistors: Challenges and Opportunities |pdf=|usr=}}{{28788569 }} gab.com Text Germanium Based Field-Effect Transistors: Challenges and Opportunities JO: Materials (Basel) http://www.kidney.de/pget.php?&tw=1&pmid=28788569 #FOAvip The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. Twit Text FOAVip Germanium Based Field-Effect Transistors: Challenges and Opportunities ????Materials (Basel) http://www.kidney.de/pget.php?&tw=1&pmid=28788569 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=28788569 #FOAvip English Wikipedia <ref>{{Cite pmid|28788569 }}</ref> Germanium Based Field-Effect Transistors: Challenges and Opportunities #MMPMID28788569 Goley PS ; Hudait MK Materials (Basel) 2014[Mar]; 7 (3 ): 2301-2339 PMID28788569 show ga The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. äGermanium Based Field-Effect Transistors: Challenges and Opportunities(epmc).pdf DeepDyve Pubget Overpricing