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2017 ; 8
(ä): 14757
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Field-emission from quantum-dot-in-perovskite solids
#MMPMID28337981
García de Arquer FP
; Gong X
; Sabatini RP
; Liu M
; Kim GH
; Sutherland BR
; Voznyy O
; Xu J
; Pang Y
; Hoogland S
; Sinton D
; Sargent E
Nat Commun
2017[Mar]; 8
(ä): 14757
PMID28337981
show ga
Quantum dot and well architectures are attractive for infrared optoelectronics,
and have led to the realization of compelling light sensors. However, they
require well-defined passivated interfaces and rapid charge transport, and this
has restricted their efficient implementation to costly vacuum-epitaxially grown
semiconductors. Here we report solution-processed, sensitive infrared
field-emission photodetectors. Using quantum-dots-in-perovskite, we demonstrate
the extraction of photocarriers via field emission, followed by the recirculation
of photogenerated carriers. We use in operando ultrafast transient spectroscopy
to sense bias-dependent photoemission and recapture in field-emission devices.
The resultant photodiodes exploit the superior electronic transport properties of
organometal halide perovskites, the quantum-size-tuned absorption of the
colloidal quantum dots and their matched interface. These field-emission
quantum-dot-in-perovskite photodiodes extend the perovskite response into the
short-wavelength infrared and achieve measured specific detectivities that exceed
10(12) Jones. The results pave the way towards novel functional photonic devices
with applications in photovoltaics and light emission.