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2017 ; 7
(ä): 44371
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Dynamics of a single-atom electron pump
#MMPMID28295055
van der Heijden J
; Tettamanzi GC
; Rogge S
Sci Rep
2017[Mar]; 7
(ä): 44371
PMID28295055
show ga
Single-electron pumps based on isolated impurity atoms have recently been
experimentally demonstrated. In these devices the Coulomb potential of an atom
creates a localised electron state with a large charging energy and considerable
orbital level spacings, enabling robust charge capturing processes. In contrast
to the frequently used gate-defined quantum dot pumps, which experience a
strongly time-dependent potential, the confinement potential in these single-atom
pumps is hardly affected by the periodic driving of the system. Here we describe
the behaviour and performance of an atomic, single parameter, electron pump. This
is done by considering the loading, isolating and unloading of one electron at
the time, on a phosphorous atom embedded in a silicon double gate transistor. The
most important feature of the atom pump is its very isolated ground state, which
is populated through the fast loading of much higher lying excited states and a
subsequent fast relaxation process. This leads to a substantial increase in
pumping accuracy, and is opposed to the adverse role of excited states observed
for quantum dot pumps due to non-adiabatic excitations. The pumping performance
is investigated as a function of dopant position, revealing a pumping behaviour
robust against the expected variability in atomic position.